push_pin Mechanism of resistive switching in HfOx-based memristors
We conducted an in-depth study of the resistance-switching mechanism in classical HfOx-based devices. Through atomic-level characterisation of the dynamic evolution of conductive filaments, we confirmed that the filament system in this type of device has a quasi-core-shell structure, consisting of a metallic Hf6O core and an insulating HfO2 crystalline shell. constitute. The study pinpointed multiple […]
push_pin When Bloch point hops through magnetic multilayers
In this Letter, we theoretically demonstrate the annihilation of single skyrmions in a multilayer structure. The process is mediated by topological hedgehog singularities known as Bloch points, whose intralayer and interlayer dynamics gives rise to intriguing emergent electromagnetic fields …
Our paper entitled ‘Magnetization dynamics in synthetic ferromagnetic thin films’ is published!
(Abstract) Synthetic ferromagnets (SFMs) possess the same layer structure found in the widely studied synthetic antiferromagnets. This consists of two ferromagnetic (FM) layers separated by a non-magnetic (NM) spacer forming the structure FM1/NM/FM2, but SFMs describe the case where the interlayer exchange coupling promotes the parallel alignment of the magnetizations of the FM layers. The […]