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Tag: HfOx

push_pin Mechanism of resistive switching in HfOx-based memristors

December 13, 2021

We conducted an in-depth study of the resistance-switching mechanism in classical HfOx-based devices. Through atomic-level characterisation of the dynamic evolution of conductive filaments, we confirmed that the filament system in this type of device has a quasi-core-shell structure, consisting of a metallic Hf6O core and an insulating HfO2 crystalline shell. constitute. The study pinpointed multiple […]

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2017 2018 2019 2020 2021 antiskyrmion atomic force microscopy Bloch point British-German WE-Heraeus-Seminar chiral magnets conductive filament conference core-shell defects Dzyaloshinskii-Moriya interaction (DMI) emergent electromagnetic field ferromagnetic resonances (FMR) field-induced transition HfOx HMM interconnect magnetic multilayer magnetic transition magnetisation dynamics memristor meron Monte Carlo neuromorphic computing paper performance improvement Pt/Co/Ta resistive random access memory (RRAM) resistive switching RKKY room temperature skyrmion skyrmionium skyrmion lattice spiking neural networks (SNN) supervised/unsupervised learning surface roughness TEM terahertz two‐dimensional materials