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Tag: resistive switching

push_pin Mechanism of resistive switching in HfOx-based memristors

December 13, 2021

We conducted an in-depth study of the resistance-switching mechanism in classical HfOx-based devices. Through atomic-level characterisation of the dynamic evolution of conductive filaments, we confirmed that the filament system in this type of device has a quasi-core-shell structure, consisting of a metallic Hf6O core and an insulating HfO2 crystalline shell. constitute. The study pinpointed multiple […]

A universal Monte Carlo model for RRAM switching

September 11, 2017

A universal Monte Carlo simulator is developed based on a cell switching model and a tunneling-based transport model. Driven by external electric field, the growing process is …

An overview of RRAM

April 18, 2017

This review discusses recent advances to improve the switching performance via the conductive filament modulation, including material modulation, device structure design, and switching operation scheme optimization …

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2017 2018 2019 2020 2021 antiskyrmion atomic force microscopy Bloch point British-German WE-Heraeus-Seminar chiral magnets conductive filament conference core-shell defects Dzyaloshinskii-Moriya interaction (DMI) emergent electromagnetic field ferromagnetic resonances (FMR) field-induced transition HfOx HMM interconnect magnetic multilayer magnetic transition magnetisation dynamics memristor meron Monte Carlo neuromorphic computing paper performance improvement Pt/Co/Ta resistive random access memory (RRAM) resistive switching RKKY room temperature skyrmion skyrmionium skyrmion lattice spiking neural networks (SNN) supervised/unsupervised learning surface roughness TEM terahertz two‐dimensional materials