Tunable terahertz oscillation arising from Bloch-point dynamics in chiral magnets
Y. Li, L. Pierobon, M. Charilaou, H.-B. Braun, N. R. Walet, J. F. Löffler, J. J. Miles, and C. Moutafis
Physical Review Research 2, 033006 (2020).
Skyrmionic interconnect device
R. Chen, Y. Li, V. F. Pavlidis, and C. Moutafis.
Physical Review Research 2, 043312 (2020).
Meronlike spin textures in in-plane-magnetized thin films
J. Vijayakumar, Y. Li, D. Bracher, C. W. Barton, M. Horisberger, T. Thomson, J. Miles, C. Moutafis, F. Nolting, C. A. F. Vaz.
Physical Review Applied 14, 054031 (2020).
Nanoscale room-temperature multilayer skyrmionic synapse for deep spiking neural networks
R. Chen, C. Li, Y. Li, J. J. Miles, G. Indiveri, S. Furber, V. F. Pavlidis, and C. Moutafis
Physical Review Applied 14, 014096 (2020).
Collective antiskyrmion-mediated phase transition and defect-induced melting in chiral magnetic films
L. Pierobon, C. Moutafis, Y. Li, J. F. Löffler, and M. Charilaou
Scientific Reports 8, 16675 (2018).
An improved analytical model for the statistics of SET emergence point in HfO2 memristive device
D. Xiang, R. Zhang, Y. Li, C. Ye, E.Miranda, J. Suñé, and S. Long
AIP Advances 9, 025118 (2019).
Investigation on the conductive filament growth dynamics in resistive switching memory via a universal Monte Carlo simulator
Y. Li, M. Zhang, S. Long, J. Teng, Q. Liu, H. Lv, E. Miranda, J. Suñé, and M. Liu
Scientific Reports 7, 11204 (2017).
A cell-based clustering model for the reset statistics in RRAM
H. Sun, M. Zhang, Y. Li, S. Long, Q. Liu, H. Lv, J. Suñé, and M. Liu
Applied Physics Letters 110, 123503 (2017).
Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐Dimensional layered materials
Y. Li, S. Long, Q. Liu, H. Lv, and M. Liu
Small 13, 1604306 (2017), selected as cover picture.